Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions

Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of materials, i.e., vdW ferromagnetic and ferroelectric materials, forming a multiferroic system. This undoubtedly introduces additional interfaces, increasing the complexity of experimental preparation. Herein, we engineer vdW intrinsic MFTJs utilizing bilayer VS_2. By employing the nonequilibrium Green's function combined with density functional theory, we systematically investigate the influence of three types of electrodes (including non-vdW pure metal Ag/Au, vdW metallic 1T-MoS_2/2H-PtTe_2, and vdW ferromagnetic metallic Fe_3GaTe_2/Fe_3GeTe_2) on the electronic transport properties of VS_2-based intrinsic MFTJs. We demonstrate that these MFTJs manifest a giant electrode-dependent electronic transport characteristic effect. Comprehensively comparing these electrode pairs, the Fe_3GaTe_2/Fe_3GeTe_2 electrode combination exhibits optimal transport properties, the maximum TMR (TER) can reach 10949% (69%) and the minimum resistance-area product (RA) is 0.45 Ωμm^2, as well as the perfect spin filtering and negative differential resistance effects. More intriguingly, TMR (TER) can be further enhanced to 34000% (380%) by applying an external bias voltage (0.1 V), while RA can be reduced to 0.16 Ωμm^2 under the influence of biaxial stress (-3%). Our proposed concept of designing vdW-MFTJs using intrinsic multiferroic materials points towards new avenues in experimental exploration.