Technological Approaches for Formation of High-Density Integral Capacitors: Deep Etching and Atomic Layer Deposition

The results of a study of promising technologies for the formation of trench and planar integrated capacitors with a high specific capacitance per unit of chip surface are presented, as well as a review of the literature and achievements of leading manufacturers of integrated circuits on this topic. In particular, the results of a study of dielectrics with a high permittivity, including ternary compounds obtained by atomic layer deposition, are presented. The issues of deposition of conformal dielectric and metallic layers in high-aspect trench structures in silicon are studied in details. The results of implementation of the novel cyclic process of deep silicon ething (nitridisation-etching) is presented. The results obtained can be used to implement industrial technological routes for the formation of integrated capacitors.