Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

We examine the morphological, magnetic and resistive switching characteristics of ZnO co-doped with both cobalt (Co) and gadolinium (Gd) for the purpose of Neuromemristive systems. By employing hydrothermal route synthesized nanoparticles and their corresponding lab-made target for sputtering methods; we incorporate gadolinium (Gd) and Cobalt (Co) into the ZnO structure. This results in an augmentation of grain volume and oxygen vacancies, which signifies the occurrence of grain growth. The increase in size of the nanoparticles decreases the interfaces between the grains, resulting in improved electrical response and the presence of ferromagnetism at 300 K in Gd and Co-doped ZnO nanoparticles. We introduce a memristor that is fabricated using sputtering and consists of a 3