Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters

Carbon nanotube field-effect transistors (CNFETs) possess high current density and carrier mobility, enabling high intrinsic gains below the 20-nm technology node. Thus, they demonstrate superior performance compared to traditional silicon analog integrated circuits (ICs). Here, the relevant parameters of a CNFET in analog IC designs were analyzed and simulated, elucidating the influence of physical parameters on the CNFET device. All simulations were performed at technology nodes smaller than 22 nm. To evaluate the performance of a CNFET analog circuit, the g(m)/I-d method for CNFET was employed, and a nanoscale two-stage operational amplifier was designed using complementary CNFET technology with a channel length of 14 nm. In addition, the impact of CNFET's physical parameters on circuit performance were examined. Our results showcased the advantages of CNFET analog circuits over traditional silicon-based analog circuits, as well as the significant influence of CNFET physical parameters on circuit performance. Consequently, this study provides a reference for productive CNFET technologies.