Spider Silk/Hemin Biobased Electrets for Organic Phototransistor Memory: A Comprehensive Study on Solution Process Engineering

ADVANCED FUNCTIONAL MATERIALS(2024)

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摘要
The escalating environmental impact of pollution and the imperative to reduce carbon emissions have heightened the significance of developing biobased materials from natural biomass for electronic devices. This study investigates the utilization of biofermentation-produced recombinant spider silk and animal-derived hemin to create a novel biobased electret for field-effect transistor memory. A critical challenge arises from the incompatibility between natural photoresponsive molecules and insulating biomaterials, resulting in severe phase separation that compromises film quality and morphology uniformity. This study systematically examines the effects of various film deposition and manufacturing techniques on the biobased electret's morphology, phase separation, and performance. Different methods demonstrate distinct advantages in terms of molecular aggregation/segregation, morphological homogeneity, and device performance. Phototransistor memory devices fabricated using spin coating and spray coating techniques exhibit robust aggregations and high memory windows of approximate to 30 V. Conversely, devices produced through solution shearing and electrospinning methods display enhanced smooth morphologies and high photoresponsivity. The phototransistor memory comprising electrospun fibers holds the potential to achieve the highest memory ratio, reaching approximate to 105. These findings not only highlight the applications of biobased materials through scalable film deposition processes but also underscore the importance of refining their morphology, phase separation, and performance in optoelectronic devices. The performance of the spider silk and hemin composite for phototransistor memories are comparatively investigated. Evaluation of diverse solution-processing methods highlights electrospinning's impact on photophysical properties. The composite exhibits memory ratios of 3.6 x 105 and 2.2 x 105 under 365 and 405 nm illumination, underscoring the crucial role of uniform morphology and ordered molecule orientation in enhancing device performance. image
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关键词
artificial spider silk,electret,electrospinning,phototransistor,solution processing
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