Enhanced ON/OFF Ratio (4x10⁵) and Robust Endurance (>10¹⁰) in an InGaZnO/Hf_xZr_1-xO₂ Ferroelectric Diode via Defect Engineering

In this study, we focused on the electrical and reliability characteristics of a ferroelectric diode (FE diode) composed of an InGaZnO (IGZO)/HfxZr1-xO2(HZO)stack by controlling the bulk and interface defect of IGZO. Initially, to achieve the high ON/OFFratio, we reduced the bulk defects in the IGZO film during deposition by adjusting the oxygen partial pressure. This strategy effectively reduced the OFF-state leakage current in the high-resistance state (HRS), as demonstrated by current-voltage (I-V) char-acteristics and x-ray photoelectron spectroscopy (XPS)analysis. Subsequently, to enhance the endurance char-acteristics, we considered the application of microwave annealing (MWA) as an alternative to the convention alrapid thermal annealing (RTA) to decrease interface traps. Upon assessing interface trap densities, we confirmed an improved interface quality within double-layered structure. Consequently, the IGZO/HZO FE diode device exhibited are markable ON/OFF ratio of 4x10(5 )and cycling endurance of10(10), underlining the importance of defect management in device performance.