Behavior of functionally graded semiconducting rod with internal heat source under a thermal shock

JOURNAL OF COMPUTATIONAL APPLIED MECHANICS(2024)

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摘要
The research article investigates the behavior of a functionally graded semiconducting rod with internal heat source of length l under the thermal shock. A sudden heat source is applied to the left boundary of the finite rod. The equations of motion are solved analytically and the analytical expressions of displacement, carrier density, temperature distribution and stresses are obtained. The numerical values of these expressions are calculated and presented graphically to show the effect of non-homogeneity parameter on the components. The variations of the parameters are shown for different theories of thermoelasticity namely Modified GreenLindsay(MGL) theory, Green-Lindsay(GL) theory, Lord-Shulman(LS) theory and Coupled(CT) theory.
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关键词
Semiconducting,Functionally Graded,heat source,Carrier density,internal heat source
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