Single-Voltage-Supply pHEMT/ mHEMT 2.4 and 5.8 GHz LNAs Using Power Constrained Design

2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF(2024)

引用 0|浏览0
暂无评分
摘要
2.4-GHz and 5.8-GHz single-voltage-supply LNAs using depletion-mode pHEMT and mHEMT technologies are demonstrated in this paper. Both pHEMT and mHEMT inductively source-degenerated LNAs with a common-drain output stage are designed around 2.4-GHz and 5.8-GHz for a single-band application. The current consumption of 11 mA at 3 V supply voltage is intentionally designed for all of the LNAs to make a performance comparison. At 2.4-GHz, the 2.4-GHz pHEMT LNA has 19 dB gain and NF= 1.64 dB while the 2.4-GHz mHEMT LNA has 19 dB gain and NF=1.18 dB. At 5.8-GHz, the 5.8-GHz pHEMT LNA has 16 dB gain and NF= 1.93 dB while the 5.8-GHz mHEMT LNA has 19 dB gain and NF=1.87 dB. The experimental results imply that LNAs with mHEMT technology have better noise and gain performance than those with pHEMT technology.
更多
查看译文
关键词
LNA,metamorphic high electron mobility transistor,(mHEMT),pseudomorphic high electron mobility transistor,(pHEMT),single-voltage-supply.
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要