A temperature sensing based Na_0.5Bi_0.5TiO₃ ferroelectric memristor device for artificial neural systems

With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 C-degrees). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application.