Growth of vertical type InSe/TMDs heterostructures for efficient charge transfer and nonlinear optical performance

Shan-Shan Kan, Yu-Xin Liu, Ming-Kun Jiang, Shi-Xuan Deng, Zhe-Kun Ren, Xiao-Meng Jiang,Cheng-Bao Yao


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Indium selenide (InSe) nanofilms with high carrier mobility and tunable band structure have attracted widespread attention in the fields of microelectronics and optoelectronic materials. However, improving the carrier lifetime and enhancing the optoelectronic properties of InSe remain challenging research. Here, designed and prepared type II InSe/transition metal dichalcogenides (TMDs) (MX2: M = Mo, W; X = S, Se) heterojunctions films. The (004) diffraction peak of the 2H phase InSe stacking and the A11g(LO) vibration mode generated by the noncentrosymmetric characteristics can be determined as e-InSe. The charge transfer and orbital contributions between the e-InSe/TMDs heterojunctions were clarified. Density functional theory calculations indicate that electrons transfer from the In-5s and Se-4p orbitals of e-InSe to the bottom of the CB of the TMDs films. Finitedifference time-domain simulation confirmed that the charge transfer between e-InSe and TMDs films enhances their electromagnetic field intensity. By adjusting the incident laser energy in femtosecond Z-scan technology, the reverse saturable absorption properties of e-InSe/WSe2 heterojunctions films are enhanced, providing an effective channel for charge transfer. The electron and energy transfer mechanism between InSe and WSe2 has been revealed, effectively increasing the lifetime of carriers and making it have broad application prospects in the field of semiconductor devices.
e-InSe/TMDs heterojunctions,Magnetron sputtering,Charge transfer,Nonlinear optics,Finite-difference time-domain,Density functional theory
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