Phase Evolution, Dielectric, and Electric Behavior of Sm-Doped BCTO Ceramic Fabricated by Semi-Wet Method

Bi(2/3)-xSmxCu3Ti4O12 (BSCTO x = 0.05, 0.10, and 0.20) ceramics are synthesized using semi-wet technique and an extensive investigation into their structural, morphological, and elemental properties, alongside dielectric and impedance behaviors, is meticulously carried out. X-ray powder diffraction analysis unequivocally confirmed the formation of a monophasic BCTO cubic phase without any discernible secondary phases. and the crystallite size of the BSCTO ceramic, obtained by X-ray diffraction using Debye Scherrer formula, range from 62 to 81 nm. Rietveld analysis reveals that ceramics have a body centered cubic structure with space group Im-3. The Scanning electron microscope image displays the dense microstructure of the ceramics, while EDX analysis unveils the elemental composition of resulting products. Doping with Sm3+ induced a notable reduction in grain size, as observed through Scanning electron microscope and Atomic Force Microscope analyses, indicating Sm3+ hindered grain growth during sintering, potentially resulting in reduced dielectric constant (epsilon '). Dielectric constant and dielectric loss of the composition (x = 0.2) are found to be approximate to 152 and 0.04, respectively at room temperature (1 kHz). Impedance characteristics revealed a substantial increase in grain boundary resistance, leading to improved dielectric loss. The AC conductivity of BSCTO ceramics exhibited a frequency-dependent increase satisfying to Johncher's power law. Bi(2/3)-xSmxCu3Ti4O12 (BSCTO x = 0.05, 0.10, and 0.20) ceramics are successfully synthesized by semi-wet route. The dielectric constant and tan delta for ceramics are found to decreases as the doping concentration increases. Due to their low dielectric loss and high dielectric constant, Sm-doped BCTO ceramics appear to be a good candidate for high capacitance density applications at high frequencies. image