Optimized Perovskite Photodetector Via Room Temperature Nanostructured Stamp Imprinting

Halide perovskite photodetectors have attracted numerous attentions due to their splendid optoelectronic properties. However, a simple and cost-effective strategy to simultaneously realize crystallization control and optical nanostructure integration is still missing. In this work, we have redesigned the traditional nanoimprint lithography (NIL) method, simultaneously realizing perovskite crystal optimization and optical nanostructure integration at room temperature and low pressure (RT imprinting). Different from the traditional high-temperature and high-pressure process, this strategy is more conducive to the application of perovskite optoelectronics on flexible substrates. Consequently, the perovskite photodetector shows a 1154.85% and 23.9% increase in detectivity and response speed after RT imprinting, respectively.