Demonstration of 651 Nm InGaN-based Red Light-Emitting Diode with an External Quantum Efficiency over 6% by InGaN/AlN Strain Release Interlayer.

This work reports a high -performance InGaN-based red-emitting LED with a strainrelease interlayer (SRI) consisting of an InGaN stress -release layer (SRL) and an AlN dislocation confinement layer (DCL) in unintentionally doped GaN (u-GaN). The SRL introduces a tensile strain which could decrease the in-plane compressive stress of the u-GaN layer, while the DCL could reduce the dislocation density and thus improve the crystal quality of the u-GaN layer. Consequently, a high -efficiency InGaN-based red-emitting LED with a peak wavelength of 651 nm and an external quantum efficiency of 6.04% is realized. In addition, the roomtemperature photoluminescence (PL) mapping emission wavelength is uniform across a 4 -inch wafer with a standard deviation of 3.3 nm. Therefore, the proposed SRI offers good potential for mass-producing high -performance and long-wavelength InGaN-based red-emitting LEDs.