A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT

This paper presents an accurate behavioral model to characterize the effect of electron irradiation on the DC performance in InP-based high electron mobility transistor (HEMT). Based on the carrier transmission mechanism of large-gate HEMTs, the change of drain-source channel current (ΔIDS) under electron irradiation has been acquired by combining the charge control model and Ohm's law. And the empirical method has been explored to model the influence of drain-source bias on carrier concentration degradation. The validity of the developed modeling approach has been verified by comparing the simulated DC characteristics with measured data of 100 nm gate length and 2 × 50 μm gate width InP-based HEMTs under different doses of electron irradiation (1×1014 cm−2, 1×1015 cm−2, 1×1016 cm−2). The Verilog-A model of electron irradiation effects on InP-based HEMTs could provide benefits for the design of integrated circuits for space applications.