2D Bi-doped SnSe Ferroelectric Memristor Integrating All-in-One Sensing-Memory-Computing

Two-dimensional (2D) layered ferroelectric materials are an emerging semiconductor expected to satisfy people’s pursuit of post-Moore era of the small-size, high-efficiency, and intellectualization. However, the asymmetric coercive-field of reported 2D ferroelectrics which was not conducive to the linearity and symmetry of conductance regulation, limiting their application. Here, we have confirmed Bi-doped can greatly enhance the symmetry of a coercive voltage (±2.4 V) of 2D-layered SnSe, and designed a multifunctional memristor whose conductance is regulated by the ferroelectric polarization direction. As the synaptic long/short-term plasticity (PPF, PTP, symmetrical STDP), the bio-fire and temporal/spatial integration functions of neurons might be emulated by changing the parameters of electrical pulses. Furthermore, under the synergistic effect of photoelectric field, the “OR/AND” logic computing and store in situ was experimentally demonstrated, meanwhile, 8-level nonvolatile photoresponses and the “LOVE” information of the 3-bit octal number combination was locally sensed, demodulated and stored. This work can provide a new way for the future development of smart hardware in photoelectric neuromorphic and edge computing systems.