Implementing Remote Doping and Suppressed Scattering in MoS $_{\text{2}}$ Field-Effect Transistor Using CMOS-Compatible Process

Doping technologies for 2-D materials, such as substitutional doping or molecular surface doping, inevitably introduce scattering caused by ionized dopants, resulting in carrier mobility degradation. Moreover, these processes are not CMOS-compatible and therefore hinder practical integration. In this study, we report the realization of remote doping and reduced carrier scattering in molybdenum disulfide (MoS $_{\text{2}}$ ) field-effect transistor (FET) with silicon oxynitride/alumina (SiO $_{\textit{x}}$ N $_{\textit{y}}$ /AlO $_{\textit{x}}$ ) encapsulation layer fabricated by CMOS-compatible process. Charged dopants in SiO $_{\textit{x}}$ N $_{\textit{y}}$ remotely dope the underlying MoS $_{\text{2}}$ channel by inserting a high- k dielectric AlO $_{\textit{x}}$ , keeping themselves spatially separated from the channel and contributing to an increase in carrier density and mobility. By depositing a charge modulation layer SiO $_{\textit{x}}$ N $_{\textit{y}}$ , it is possible to achieve an electron density change ( $\Delta \textit{n}$ ) of 2.2 $\times$ 10 $^{\text{12}}$ cm $^{-\text{2}}$ . Additionally, the remotely doped MoS $_{\text{2}}$ FETs exhibit improved contact and increased room-temperature mobility compared to the pristine MoS $_{\text{2}}$ FETs. Furthermore, the temperature-dependent characterization of the remotely doped MoS $_{\text{2}}$ FET demonstrates significant suppression of charged impurity scattering.