Solution-Processed Inks with Fillers of NbS_3 Quasi-One-Dimensional Charge-Density-Wave Material
arxiv(2024)
摘要
We report on the solution processing and testing of electronic ink comprised
of quasi-one-dimensional NbS_3 charge-density-wave fillers. The ink was
prepared by liquid-phase exfoliation of NbS_3 crystals into high-aspect ratio
quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene
glycol solution. The results of the electrical measurements of two-terminal
electronic test structures printed on silicon substrates reveal resistance
anomalies in the temperature range of 330 K to 370 K. It was found that the
changes in the temperature-dependent resistive characteristics of the test
structures originate from the charge-density-wave phase transition of
individual NbS_3 fillers. The latter confirms that the exfoliated NbS_3
fillers preserve their intrinsic charge-density-wave quantum condensate states
and can undergo phase transitions above room temperature even after chemical
exfoliation processes and printing. These results are important for developing
"quantum inks" with charge-density-wave fillers for the increased functionality
of future solution-processed electronics.
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