DPT of ANPC Three-Level Converters Based on GaN HEMT

This paper presents a double-pulse testing (DPT) method for active neutral-point-clamped (ANPC) three-level converters based on GaN HEMT. The paper analyzes the voltage imbalance issue between the inner and outer device ends under traditional testing timing. It proposes a method to increase clamp switch device action to balance the voltage at both ends. Additionally, the paper proposes three different DPT timing schemes for ANPC three-level converters based on their switching state and commutation path. Finally, through DPT simulation, the paper analyzes the dynamic characteristics of GaN HEMT under different external driving resistances and load currents, presenting simulation results. The DPT scheme presented in this paper applies to the topology analysis of all ANPC three-level converters.