Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)

The electrical behavior of 22-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) MOSFETs has been investigated up to a total ionizing dose (TID) radiation of 100 Mrad(Si). At high TID levels, the radiation-induced parameter degradation of test devices is obvious. By exploring the channel length and width dependence, we demonstrate that the high TID effect of UTBB FD-SOI devices is mainly governed by trapped charges in buried oxides (BOX) layer, and TID effects in shallow trench isolation (STI) and spacer oxide are negligible. Furthermore, the TID radiation-induced drain bias induce barrier lowering (DIBL) effect in UTBB FD-SOI nMOSFETs is also observed, which limits the radiation tolerance of devices in the saturation region. Finally, based on technology computer aided design (TCAD) simulations, the related mechanisms for subthreshold slope degradation and radiation-induced DIBL effect of UTBB FD-SOI technology are proposed, respectively.