Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach
IEEE Transactions on Electron Devices(2024)
摘要
This article proposes a novel modeling approach for the analysis of the microwave power performance of GaN HEMTs. By combining Technology Computer-Aided Design (TCAD) physical and circuit design standard compact trap models, surface and buffer traps can be directly correlated, for the first time, with power-added efficiency (PAE) and output power (
$\textit{P}_\text{out}$
). A new trap model topology is created with an
RC
subnetwork and nonlinear scaling functions, encouraged by TCAD analysis on trap localization. The effects of surface trapping were quantified using a TCAD-based extraction of the proposed trap model, observing a loss on
$\textit{P}_\text{out}$
of 3 dBm and a maximum PAE (
$\text{PAE}_\text{MAX}$
) loss of 12% due to surface traps. In addition, the correlation of 2-D electron gas (2DEG) at the drain access region with
$\text{PAE}_\text{MAX}$
and the 1-dB compression point of
$\textit{P}_\text{out}$
(
$\text{OP}_\text{1\,dB}$
) is investigated and transformed into a correlation between the density of traps (
$\textit{N}_\text{T}$
) and
$\text{PAE}_\text{MAX}$
and
$\text{OP}_\text{1\,dB}$
, creating a new direct method to connect TCAD with RF large-signal simulations.
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关键词
GaN HEMT,large-signal model,microwave,Technology Computer-Aided Design (TCAD) modeling,trapping effects
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