Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect
arxiv(2024)
摘要
The paper investigates the systematic dependencies of the anisotropy field
and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO
nanomagnets. Our findings reveal an intriguing opposite polarity in the
gate-voltage dependencies of the anisotropy field and the coefficient of SO
interaction across all studied nanomagnets. This opposite polarity signifies
that both the strength of spin-orbit interaction and the demagnetization field
are effectively modulated by the gate voltage, exhibiting an increase with
higher gate voltages. This finding indicates that the gate voltage modulation
of spin-orbit interaction and the demagnetization field are two major
contributions to the Voltage-Controlled Magnetic Anisotropy (VCMA) effect in
FeB nanomagnets. Due to the opposite polarities of these contributions, they
effectively counterbalance each other, resulting in a reduction of the VCMA
effect. Optimizing the balance between these contributions could potentially
lead to a substantial enhancement of the VCMA effect. Our measurements did not
detect any modulation of in-plane component of spin accumulation by the gate
voltage.
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