Strong Damping-Like Torques in Wafer-Scale MoTe_2 Grown by MOCVD

The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T^' phase MoTe_2 is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T^' MoTe_2 using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C_4H_9)_2Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T^' and 2H MoTe_2 mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T^' MoTe_2 films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T^' MoTe_2/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T^' MoTe_2 film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.