Low temperature (002)-oriented zinc oxide films prepared using ozone-based spatial atomic layer deposition

In this study, ZnO films are prepared at a low temperature of 150 °C by using spatial atomic layer deposition (sALD) with diethylzinc and ozone as precursor and oxidant. The ozone flow rate is varied to systematically investigate its effect on optical, structural and electrical properties. The experimental results show that the self-limiting surface reactions can occur at the low ozone flow rate of 200 sccm, confirming ALD growth mode. All the ozone flow rates lead to ZnO (002) crystalline orientation, which is difficult to be obtained for conventional water-based ALD ZnO films at the low temperature. The increased ozone flow rate results in an increased amount of oxygen vacancies, enhanced carrier concentration and a reduced stress. The resistivity and carrier concentration can be tuned in the range of 4.75-0.08 Ω-cm and (1.1-5.5)×1018 cm-3. Finally, the sALD ZnO film on polyethylene terephthalate reveals a high stability in the film property against bending. This study is beneficial for the utilization of ZnO films in optoelectronic devices that demand the (002) preferred orientation, especially under low-temperature conditions.