A design methodology for highly reliable operation for 2T0C DRAM application based on IGZO CAA FeFETs

Abstract In this paper, the memory characteristics of In-Ga-Zn-O (IGZO)-channel ferroelectric FETs (FeFETs) with stackable vertical Channel-All-Around (CAA) structure are investigated by technology computer-aided design (TCAD) simulation. The simulated IDS~VGS curves of IGZO FeFET exists a large on-off ratio of 107 and memory window, proving that ferroelectric hafnium oxide is satisfied for 2T0C transistor design. To solve the potential current sharing problem of 2T0C dynamic random access memory (DRAM) array, an advanced operation design methodology is proposed, which utilizes the bipolar polarization characteristics of ferroelectric hafnium oxide. This solution shows the remarkable current ratio between data “1” and data “0”, not only demonstrating the feasibility of IGZO-based FeFET on 2T0C DRAM memory cell, but also providing array design guideline for highly reliable 2T0C memory applications.