Demonstration of $>$ 8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
IEEE Transactions on Electron Devices(2024)
摘要
Traditional GaN HEMTs on silicon suffer relatively low lateral and vertical blocking voltages and thick buffers, which impede their use in
$\bm{\ge} $
1.2-kV applications. In this work, the prototypes of 8-kV GaN HEMTs on 6-in sapphire are successfully fabricated using CMOS-compatible processing. An etch-stop nitride layer AlN in the in situ SiN cap precisely defines the gate dielectric thickness. Au-free low-temperature ohmic contact and metal I are achieved by Ti/AlCu/Ti/TiN, and gate metal is achieved by TiN/Ti/AlCu/Ti/TiN, which significantly reduces the material cost. The high mechanical strength of sapphire results in low nonuniformity and well-controlled warpage, enabling the use of a 1.5-
$\bm{\mu} $
m buffer. The fabricated HEMTs with an
$\textit{L}_{\text{GD}}$
of 100
$\bm{\mu} $
m exhibit a low
$\textit{R}_{\text{ON}}$
of 52
$\bm\Omega \cdot$
mm and a stable
$\textit{V}_{\text{TH}}$
of
$-$
20 V. Benefiting from high-quality in situ SiN passivation, the dynamic
$\textit{R}_{\text{ON}}$
and
$\textit{V}_{\text{TH}}$
shift are maintained within 2.5% and 10%, respectively. The OFF-state breakdown voltage (BV) is increased beyond 8 kV using a simple device structure with only two field plates. The proposed low-cost and CMOS-compatible 8-kV GaN HEMTs fabricated on 6-in sapphire highlight an extremely simple epitaxy process, lateral device structure, and processing flow. Therefore, they offer great potential for serving future medium-voltage applications.
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关键词
6-in sapphire,8 kV,GaN HEMTs,medium voltage
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