Effect of Eu Concentration on the Optical Properties of BaMgSiO4 Long Persisting Phosphorous Material

BMS (BaMgSiO4) is a promising candidate for inorganic photochromatic materials with excellent opto-electronic properties. Because of its applications in high density optical memory and LEDs, the host matrix BMS has piqued the interest of academics all over the world. In this study, the generalized gradient (GGA and GGA + U) approximations were used to examine the electronic structure and optical properties of BaMgSiO4:Eu, including dielectric function, refractive and extinction coefficients, the optical conductivity, reflectivity, and absorption spectra. It is found that the substitution of Eu ions has reduced the energy band gap of BaMgSiO4. Our findings show that the band gap and optical characteristics of BaMgSiO4 compound are better described by GGA + U method. Future research can use this study as a guide, and it contributes to extending the capabilities of BaMgSiO4 materials to optical applications. The results of this study suggest that phosphide semiconductors could be used in solar cells.