High quality PVD-MoS2 film on plasma-ALD-SiO2 underlaying material for CFET integration

Naoki Matsunaga,Shinya Imai,Takanori Shirokura,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2024）

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摘要

PVD-MoS 2 film on various underlaying materials for a CFET was investigated. It is confirmed that the chemical composition ratio and crystallinity of MoS 2 films are significantly affected by the type of underlying material. A high-quality MoS 2 film was obtained on a plasma-ALD (Atomic-Layer Deposition) SiO 2 film. This result can guide the application of MoS 2 in future electronic systems such as the CFET.

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关键词

CFET,molybdenum disulfide (MoS2),transition metal dichalcogenide,plasma-ALD SiO2,Raman spectroscopy and RF magnetron sputtering

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