Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications

This paper presents an ultra-wideband (UWB)medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using 0.15 mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (P-sat) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of 2x1 mm(2). The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm P-sat, and a PAE over 28%from 24 to 32 GHz with a 2.4 x 1.1 mm(2) chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications