Self-Powered and Highly Efficient Ion-Diffused MAPbBr₃ Perovskite Single Crystal-Based UV-Vis Photodiode

The perovskite single crystals (PSC) produced by solution-processed metallic ions doping have a thick p-n junction (greater than 10 mu m). Meanwhile, to achieve high responsivity, the carrier drift length (mu tau E) has to be larger than the dimensions of the detector. If the p-n junction is quite thick, a high bias voltage is required. For the practical application of photodiode, it is imperative to find a means to generate a thin p-n junction. A productive technique is suggested for forming a thin p-n junction by diffusing metallic ions, resulting in a longer drift length of the carrier than the depletion width. Thinner p-n junction leads to reduced dark current density (0.5 mu A cm(-2)), low trap density (5.71 x 10(8) cm(-3)), high mobility (417 cm(2) V-1 s(-1)), and hence increased responsivity (77.69 A W-1) for 30 mu W cm(-2) UV illumination under a low applied voltage of -15 V. A quick response time with a rise/fall duration of 22 ms/30 ms under 0 V and long-term stability for over 3 months in ambient airis achieved. To comprehend the performance with the thinner p-n junction-based photodiodes, the results under UV-Vis illumination are examined and compared. The outcomes hint at a method that holds promise for producing efficient photodiodes.