Study of an MoS2 Phototransistor Using a Compact Numerical Method Enabling Detailed Analysis of 2D Material Phototransistors

Abstract We present a detailed numerical framework for solving the drift-diffusion equations to characterize two-dimensional material-based phototransistors and we apply this framework to a phototransistor made from monolayer molybdenum disulfide (MoS2) that is placed on top of a back-gated silicon-oxide-coated silicon substrate. Numerical results, which show good agreement with the experimental results found in the literature, emphasize the necessity of including the inhomogeneous background for the accurate calculation of device metrics such as quantum efficiency and bandwidth. We also calculate the phase noise of these phototransistors, which is a crucial performance metric for many applications where precise timing and synchronization are critical.