AlGaN-based deep UV communication LED with superlattice electron-blocking layer at 274 nm

Deep ultraviolet (DUV) light-emitting diodes (LEDs) have attracted widespread attention in communication because of their lack of background noise interference in day-blind communications, but their low luminous efficiency and low response frequency cannot meet the requirements of non-visual optical communication systems. AlGaN-based micro-LEDs (μ-LEDs) can provide high light output power (LOP) due to their smaller chip size, and they can also withstand high current density due to their enhanced current diffusion uniformity. Thus, matrix-type DUV μ-LEDs are effective candidates to enhance LOP and response frequency. In this work, a matrix-type AlGaN-based DUV communication LED with step-graded Al composition superlattice (SL) electron-blocking layer (EBL) at wavelength of 274 nm was designed, LOP and response frequency reached 45.4 mW and 414 MHz at 212 A/cm ² current density. After this SL EBL applied in the UV communication LED, hole injection capability was enhanced, high LOP and high response frequency make it be an ideal candidate for wireless communication applications.