Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence.

Taiki Uemura,Byungjin Chung,Jaehee Choi,Seungbae Lee, Shin-Young Chung,Yuchul Hwang,Sangwoo Pae

IEEE International Reliability Physics Symposium（2024）

引用 0|浏览1

暂无评分

摘要

We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm FDSOI-planar is significantly lower than that of 28 nm FDSOI-planar. The total SER (alpha SER + neutron SER) in SRAM of 18 nm FDSOI-planar is lower than all the bulk-planar and bulk-FinFET technologies. We also examine the temperature dependence of SER in FDSOI-planar.

查看译文

关键词

Temperature Dependence,Scale Effect,Soft Error Rate,Processing Technology,Regression Curve,Parasitic Effects,Nominal Voltage,Scalable Technology,Linear Energy Transfer,Channel Material,Size Shrinkage,Channel Volume

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要