2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs
IEEE Electron Device Letters（2024）
摘要
Herein, by modulating 2DEG concentration (
n
s
), a superior GaN RF HEMT with a high-Al-content AlGaN barrier is reported for high power-density (
P
out
) X-band applications. Thanks to a high
n
s
of 1.3×10
13
cm
-2
enabled by the Al
0.32
Ga
0.68
N barrier, as well as the regrown n
+
-GaN ohmic contacts, the device exhibits an output drain current (
I
D
) of 1.6 A/mm, an on-resistance (
R
ON
) of 1.10 Ω·mm, and maintain a breakdown electric field (
E
BC
) of ~0.8 MV/cm. As a result, at 10 GHz,
P
out
of 10.4 W/mm and power-added efficiency (PAE) of 63.2% are obtained at a moderate drain bias (
V
D
) of 28 V. Notably, the results of
I
D
–
E
BC
,
P
out
–
V
D
, and the figure-of-merit
P
out
/
V
D
of our device marks one of the best records among X-band GaN HEMTs, showing strong competitiveness of high-Al-content AlGaN/GaN HEMTs for high-
P
out
RF applications.
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关键词
GaN RF HEMTs,high-Al-content AlGaN,output power density,X-band applications
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