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    • Mechanism and Barrier Modulation of Pt/TaO x /HfO 2 /TiN Self-Rectifying Devices

    Wanning Liu, Yao Shi,Fang Wang,Xin Lin, Fei Wang, Xingbo Chen, Shihao Lu,Han Sun,Yuchan Wang, Changpo Xu,Zhitang Song,Kailiang Zhang

    IEEE Transactions on Electron Devices（2024）

    School of Integrated Circuit Science and Engineering | School of Materials Science and Engineering | TCL Huanxin Semiconductor (Tianjin) Company | Shanghai Institute of Microsystem and Information Technology

    Cited 0|Views9
    Abstract
    In order to solve the crosstalk issue in a high-density memristor integrated array, the sneak path current in crossbar array should be effectively reduced. The self-rectifying memristor (SRM) becomes the best choice because of suppressing leakage current while exhibiting resistive characteristics without the need for external equipment, in which can improve array integration at a lower cost. In this article, an SRM with Pt/TaO x /HfO 2 /TiN structure is proposed. By modulating the thickness of the HfO 2 rectifying layer, the rectifying ratio of device can achieve as 3743 under ± 3 V with a sneak current below 10 nA and compliance current under 10 μ A. The self-rectification mechanism based on Schottky barrier modulation and oxygen vacancy defect traps is demonstrated by fitting analysis and interfacial barrier energy bands model. The maximum array size can reach 12 570 at the premise of 10% read margin with the device parameters. Our results provide a potential solution for the future application of memristor in the field of high-density memory integration.
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    Key words
    Crossbar array,interfacial barrier,memristor,self-rectifying,sneak current
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    【要点】：本研究提出了一种Pt/TaO${x}$/HfO${2}$/TiN自整流忆阻器结构，通过调控肖特基势垒和氧空位缺陷陷阱，有效减少交叉阵列中的漏电流，从而抑制了忆阻器阵列中的串扰问题。
    

    【方法】：通过调节HfO$_{2}$整流层的厚度，优化自整流忆阻器的整流比，减少 sneak path current 和 compliance current。
    

    【实验】：实验中，整流层厚度调制使得忆阻器在±3V下的整流比达到3743，sneak current 低于10 nA，compliance current 低于10 µA。通过拟合分析和界面势垒能带模型，验证了基于肖特基势垒调制和氧空位缺陷陷阱的自整流机制。该设备参数下，最大阵列规模可达12,570，保持10%的读取边距。