In this paper we present an infrared laser pointer, consisting of a vertical-cavity surface-emitting laser (VCSEL) and a diffractive optical element (DOE), encapsulated into a scleral contact lens (SCL). The VCSEL is powered remotely by inductive coupling from a primary antenna embedded into an eyewear frame. The DOE is used either to collimate the laser beam or to project a pattern image at a chosen distance in front of the eye. We detail the different SCL constitutive blocks, how they are manufactured and assembled. We particularly emphasize the various technological challenges related to their encapsulation in the reduced volume of the SCL, while keeping the pupil free. Finally, we describe how the laser pointer operates, what are its performances (e.g. collimation, image formation) and how it can be used efficiently in various application fields such as visual assistance and augmented reality.
Overview of locations and era of Hypnotic practiceThis book examines the development of hypnotism through the prism of newspaper reports, journals and magazines. This ‘Devil’s Trick’ changes its na...
When Charles Dodgson (1832–1898) published Alice’s Adventures in Wonderland in 1865 it propelled him to worldwide fame, under the pen-name Lewis Carroll, as one of the great storytellers. This repu...
In the current work, indium doped zinc oxide thin films were deposited by spray pyrolysis technique on glass substrate at 350 °C. The effect of the preparation conditions on the structural, morphological, optical and electrical properties of the films has been studied. The molar ratio of indium in the spray solution was varied from 0 to 5 at %. All the deposited films are polycrystalline with a (002) preferential orientation at low indium concentration. X-ray diffraction technique shows that the quality of the films was deteriorated when increasing indium concentration. Scanning Electron Microscopy and Atomic Force microscopy were performed to examine the surface morphology of the films. The deposited films showed an average optical transmittance around 85 % in the visible region; meanwhile the band gap value was varied between 3.13 and 3.25 eV. Hall Effect measurements revealed that the indium doping induces an increase in the electron concentrations, making the films heavily n type. A lowest resistivity (0.3 Ωcm), compared to that of the undoped ZnO (66 Ωcm), is obtained for the film doped with 3 % of indium. Copyright © 2014 IFSA Publishing, S. L.
