We demonstrate the first electrically pumped quantum-dot (QD) lasers grown on recessed 300 mm Si wafers, with maximum CW lasing output power of 125 mW at 20 °C. This significant advance in heteroepitaxial integration of III-V gain elements onto existing CMOS-compatible Si photonic circuits is promising for photonic integrated circuit integration.
We demonstrate an electrically synchronized two-color all-semiconductor mode-locked laser system operating at a repetition rate of 282 MHz, generating picosecond pulses centered at 974 nm and 833 nm with peak powers exceeding 100 W and 80 W respectively and a $\text{TEM}_{00}$ mode profile at output.
We design a quantum-dot single-photon source with a defect-based photonic crystal cavity on a SiN waveguide that subdues crosstalk from resonant excitation and has >90% coupling efficiency. It is expected to efficiently generate single photons with high purity and indistinguishability for scalable integrated quantum photonics.
We demonstrate a GaSb/Si3N4 Vernier hybrid laser with a wide tuning range of 170 nm around $2.55\ \mu \mathrm{m}$, exhibiting > 1 mW of output power in continuous wave over the entire band, making such laser very attractive for sensing applications.
We successfully improved characteristics of ridge structured QD-LD and demonstrated threshold current of 9.5 mA and corresponding threshold current density of 0.34 kA/cm2, whose value was the lowest class previously reported as $1.55 \mu\mathrm{m}$-band edge emitted type QD-LDs to the best of our knowledge.
