A design method for negative refractive index (NRI) metasurface lenses whose thickness is thinner than that of conventional NRI metamaterial ones is presented. A one-dimensional distributed transmission-line model is introduced to the design and the design formulas for determining the line length and the characteristic impedance are shown. As an example, a NRI metasurface lens operating at 1.85 GHz is designed based on the proposed method. A circuit simulation is carried out and complex voltage distributions are calculated to confirm the focusing operation of the designed lens whose thickness is sufficiently thinner than the wavelength.
This paper designs a transmissive metalens unit with independent control of amplitude and phase. The proposed metalens can be used as an antenna-in-package (AiP) solution to shape the radiation patterns for the millimeter-wave (mm-Wave) transceiver chip modules. The proposed metalens unit cell has three metal layers. The top and bottom layers are metal grids. The middle layer is a T-shaped metal structure used to control the amplitude and phase. The unit cell works in the frequency band of 50-60GHz, the amplitude control range is 0-0.935, and the phase shift range is over 360 degrees, which can realize the independent control of amplitude and phase. Based on the unit cell, a wideband high-gain, low sidelobe levels metalens antenna is designed, with excellent performance (SLL better than -25 dB, beam deflection of ±30 degrees).
A 60 GHz direct up-conversion mixer in 22 nm FD-SOI is presented. Based on an output buffer with negative feedback, a 1-dB output compression point (P o1dB ) of 0.4 dBm and a conversion gain of 4.5 dB are achieved. The required local oscillator (LO) power is only −11 dBm due to an LO buffer. Including the buffers, the total DC power is 18.6 mW. The circuit core occupies 0.12 mm 2 . Compared to state-of-the-art CMOS mixers at 60 GHz, the circuit shows the highest P o1dB and the lowest LO power at high conversion gain. Moreover, for the first time, the switching between active and standby mode via back-gate biasing is investigated for such a mixer. The back-gate switching avoids the breakdown problems of front-gate switching.
This paper presents a wideband 5-bit vector-sum phase shifter implemented in a low-cost 90-nm CMOS process. The proposed vector-sum phase shifter consists of a wideband quadrature generator with low amplitude/phase imbalance and a wideband, low-phase variation variable-gain amplifier integrated with 0/π phase shifter to satisfy most of the operation frequency bands of the 5G millimeter-wave communications. From 25 to 43 GHz, the proposed 5-bit phase shifter demonstrates the RMS amplitude/phase errors of better than 1.4 dB/4.8°, and the insertion losses of all states are lower than 6.4 dB from 25 to 43 GHz.
An I-V global parameter extraction technique for the industry standard FinFET compact model BSIM-CMG using deep learning (DL) is presented in this paper. The training data of 750k is generated by Monte Carlo simulation of key BSIM-CMG Parameters and gate length (L G ) for multiple devices. The created deep learning parameter extractor is trained to use I-V and L G data to predict the BSIM-CMG parameters. The DL parameter extractor is verified using measured device data, with L G ranging from 50n to 970nm. The created global model was able to create an accurate fitting for the input characteristics of multiple devices while capturing the trends in key electrical parameters. The results show the tremendous potential of using DL to create accurate global models instantly where measurement and manufacturing errors are present.
