In this study, 6-(cyclopropanesulfonamido)-N-(2-ethylphenyl)imidazo[1,2-b] pyridazine-2-carboxamide (1) was synthesized through five steps. The structure was identified by 1H NMR,13C NMR, MS, FT-IR and SC-XRD. Theoretical calculations were carried out using the DFT/B3LYP method with the 6-311 + G(2d, p) basis set. Based on this approach, the molecular electrostatic potential (MEP), frontier molecular orbitals (FMOs), vibrational properties, and Hirshfeld surface analysis of compound 1were investigated and analyzed to elucidate its physicochemical characteristics. Subsequently, integrated analysis of molecular docking, in vitro cellular activity assays and in silico ADME property predictions demonstrated that compound 1 exhibits potential inhibitory and biological activity.
Thin films of (La0.06Ga0.94)2O3:Eu3+ were obtained by radio-frequency ion-plasma sputtering in an argon atmosphere on amorphous upsilon-SiO2 substrates. XRD analysis revealed that the freshly deposited films have an amorphous structure, whereas heat treatment in argon leads to the formation of a polycrystalline structure in the films. Atomic force microscopy was used to study the morphology of the film surface and determine the parameters of the grains that form the film surface. The results of studies of the photoluminescence and cathodoluminescence of the studied films are presented. It is shown that thin films ((La0.06Ga0.94)2O3:Eu emit in the blue region of the spectrum upon photoexcitation, and this luminescence is caused by the luminescence of the (La0.06Ga0.94)2O3 matrix. Under cathodic excitation, the activator luminescence of Eu3+ ions caused by 5D0 -> 7FJ (J = 0, 1, 2, 3, 4) electronic transitions is observed. The wavelength of the emission maximum is 613 nm, which corresponds to red luminescence.
We investigate the growth kinetics of indium nanostructures on A3B6 layered chalcogenide crystals (In4Se3, InTe) surfaces using STM-based fractal surface analysis. By applying the Flooding method to STM images of different resolutions, we quantify the evolution of fractal dimension during indium deposition and secondary solid-state dewetting. The results reveal resolution-dependent signatures of Gibbs–Thomson–driven nanostructure coarsening, height-distribution effects, and distinct growth regimes governed by substrate anisotropy. Comparative analysis across macro and nano scale STM areas demonstrates that fractal metrics efficiently capture surface complexity and reliably characterize hetero nanostructure formation on 2D semiconductor templates.
