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    Physica Status Solidi (B) Basic Solid State Physics

    Physica Status Solidi (B) Basic Solid State Physics

    JournalISSN 0370-1972eISSN 1521-3951中科院 物理与天体物理 4区

    年发文量

    研究主题

    论文(36124)

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    1Comparative Local Density‐of‐States Analysis of Local Perturbations Within a Rashba–Zeeman Superconducting Model
    Mufasila Mumthaz Muhammed,Junais Habeeb Mokkath

    Defects can significantly influence the low‐energy electronic structure of superconducting materials with spin–orbit coupling and Zeeman fields. In this work, we present a comparative numerical study of defect‐induced spectral features in a two‐dimensional Rashba–Zeeman superconducting model using a Green's function embedding approach. Spatially resolved and energy‐resolved unnormalized local density‐of‐states (LDOS) calculations are analyzed together with the extracted in‐gap‐state energies and radial LDOS profiles. Magnetic impurities, vacancy‐like perturbations, and local suppression of the superconducting pairing amplitude generate localized subgap spectral responses whose energies, spectral weights, and spatial structures depend on the microscopic form of the perturbation and the model parameters. For the magnetic impurity, the evolution of the in‐gap state with impurity strength is consistent with the established behavior of Yu–Shiba–Rusinov‐type states, while the radial LDOS exhibits nonmonotonic spatial modulations superimposed on an overall decaying envelope. The response to an in‐plane Zeeman‐field component is also defect dependent: The three perturbations exhibit distinct zero‐energy LDOS amplitudes and corresponding evolution of their in‐gap‐state energies. The principal contribution of this work is a side‐by‐side comparison of these three local perturbation channels using the same host model and Green function framework. These results provide a comparative characterization of defect‐induced LDOS responses and illustrate how local perturbations influence the quasiparticle spectrum in spin–orbit‐coupled superconductors within a non‐self‐consistent Bogoliubov–de Gennes framework.

    2026
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    2The Effective Regulation of Anisotropic Thermal Properties in Three‐Dimensional ZnSe Through Cu Substitution
    Yang Liu, Fucheng Wang,Yufei Gao,Xiaoliang Zhang, Yuchao Liu,Yuhang Jing

    In our study of the thermal transport properties of ZnSe during the substitution process, we surprisingly found that the proportion of Cu substitution can effectively regulate the anisotropy of ZnSe’s thermal conductivity (TC). Specifically, 50% Cu substitution induces a pronounced anisotropy, while the other substitution levels (0%, 25%, and 75%) exhibit isotropic TC. In this structure, the contribution of optical phonons to TC anomalously exceeds that of the acoustic phonon branches. This phenomenon fundamentally arises because optical phonons possess relatively high group velocities, enabling them to cross the LA branch and strongly interact with the TA branches. More importantly, such interactions also cause hybridization at the crossing points, leading to the opening of bandgaps, while also splitting two degenerate TA branches into distinct ones. As a result, the 50% substituted model exhibits anisotropic TC. Further analysis of bonding strength and mechanical properties shows that the 50% substituted model displays the most pronounced differences in bond strength, with its Young’s modulus, shear modulus, and Poisson’s ratio all presenting significant anisotropy. This provides both structural and mechanical explanations for the observed anisotropy in TC.

    2026
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    3Modulating the Gas Sensing Performance of GaN Monolayer Toward SF 6 Decomposition Products Via Transition Metal Doping
    Caixia Guo, Yaozhen Xing,Tianxing Wang, Qiulin Yuan

    In gas‐insulated equipment, detecting trace sulfur hexafluoride (SF6) decomposition products is critical for diagnosing insulation faults. Here, the thermodynamic stability, gas adsorption behaviors toward key SF 6 byproducts (H 2 S, SO 2 , SOF 2 , and SO 2 F 2 ), and the electronic transport properties of transition‐metal‐doped (TM = Fe, Co, Ni) GaN monolayers are systematically investigated using density functional theory combined with the nonequilibrium Green’s functions. The TM dopants preserve the semiconducting nature of the GaN monolayer while effectively tuning its bandgap. Notably, the Fe‐doped GaN monolayer exhibits reversible adsorption toward H 2 S with a reasonable recovery time of 32.7 s at 500 K, indicating its great potential as a reusable H 2 S sensor, while demonstrating strong chemisorption toward SO 2 , SOF 2 , and SO 2 F 2 with pronounced bandgap alterations. Electronic transport simulations based on a Fe‐doped GaN field‐effect transistor model further demonstrate superior sensitivity and selectivity toward these gases. In particular, distinct negative differential resistance behaviors and pronounced current responses provide a viable electronic fingerprint for discriminating specific SF 6 decomposition products. These findings provide valuable theoretical guidelines for designing 2D GaN‐based gas sensors for fault diagnostics in high‐voltage equipment.

    2026
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    4Structural Stability, Mechanical Behavior, Electronic Feature, and Magnetic Properties of CrMnRhZ (Z = Sn, Sb) Heusler Alloys: Prospects for New Spintronic Devices
    Wen‐Chao Huang, Qian‐Bing Yin,Xiao‐Fang Wang

    Using density functional theory (DFT), we conduct a comprehensive theoretical investigation of the quaternary Heusler alloys CrMnRhZ (Z = Sn, Sb). Our study focuses on analyzing the stability, electronic structure, magnetism, exchange interactions, and Curie temperature of these alloys. The calculation results show that CrMnRhSn and CrMnRhSb exhibit half‐metallicity. The magnetic calculations show that the alloys have integer magnetic moments and adhere to the Slater–Pauling rule, M t = Z t − 24. Based on crystal field theory, orbital hybridization theory, and exchange interactions, the coupling mechanism of electrons and the origin of integer magnetic moments are analyzed. Based on the Heisenberg model, we use the Monte Carlo method to calculate the Curie temperatures of CrMnRhZ (Z = Sn, Sb), which were 480 and 230 K, respectively. Our simulations show that although both compounds exhibit half‐metallic properties, their practical application is limited by distinct challenges.

    2026
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    5First‐Principles Investigation of Electronic, Mechanical, Thermal, and Optical Properties of Janus TaSeS Monolayer
    Pramod Kumar Thakur,Gopi Chandra Kaphle,Hari Shankar Mallik, Manoj Kumar Yadav,Hari Prasad Lamichhane

    First‐principles‐based density functional theory simulations have been carried out to investigate the electronic and physical properties of Janus TaSeS monolayer in 1H‐phase. The optimized structure shows non‐magnetic ground state with lattice parameter of 6.35 Å. The negative values of cohesive (−6.51 eV) and formation (−1.26 eV) energies reveal its chemical stability, and the positive values of frequencies in acoustic branch indicate its dynamical stability. The metallic behavior of the material is confirmed due to contribution of dz 2 ‐orbital near the Fermi level, a characteristic of cold metallic‐like materials. The elastic constants satisfy Born–Huang criteria, confirming the mechanical stability of the material. The value of Poisson's ratio (0.36) confirms the ductile behavior. The 2D polar plots show isotropic properties for both in‐plane stiffness and Poisson's ratio. The onset of nonlinear elastic behavior due to the effect of both uniaxial and biaxial strain is analyzed. The variation of C p and C v within the Dulong–Petit limit is in agreement with the Debye T 3 ‐law. The analysis of optical properties within the range of 0–14 eV photon energy reflects the applications of TaSeS in various functionalities within ultraviolet to infrared regions.

    2026
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    高被引作者

    作者引用发文
    Konstantin Sergeevich Novoselov221574
    Daniel Cunha Elias221422
    Andre Geim221211
    Da Jiang221211
    I. I. Barbolina221211
    R. Yang221211
    Ernie W. Hill221211
    P. Blake221211
    Thomas J Booth221211
    Jan Tauc123511

    高产作者

    作者引用发文
    T. Soma989109
    Manuel Cardona418390
    H.-Matsuo Kagaya55879
    Rudolf Herrmann69676
    C. Thomsen186972
    Friedhelm Bechstedt472871
    Jai Shanker101969
    Detlef Hommel90368
    Thomas Pichler91867
    Svetlana Zazubovich115767

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