Vestnik of Lobachevsky State University of Nizhni Novgorod Series Social Sciences（2010）
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摘要
A procedure to control thin silicon-on-sapphire layers in an electrolyte/semiconductor system has been developed. The procedure differs from the conventional one by a specific way of making an electrolyte/semiconductor contact. The application of the procedure allows one to define a number of significant layer parameters such as thickness, doping level and profile, and to determine the presence of deep defects in Si layers.
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