The Hall effect measurements have been carried out on thin (0.2-2 micron) silicon-on-sapphire layers grown by sublimation molecular beam epitaxy at substrate temperature 600-700°С from Si sources with different P doping level. The temperature dependences have been measured of specific surface conductance and carrier mobility in field effect.
A procedure to control thin silicon-on-sapphire layers in an electrolyte/semiconductor system has been developed. The procedure differs from the conventional one by a specific way of making an electrolyte/semiconductor contact. The application of the procedure allows one to define a number of significant layer parameters such as thickness, doping level and profile, and to determine the presence of deep defects in Si layers.
Shengurov Vladimir合作论文数5Sergey a Denisov合作论文数4Шиляев Павел Анатольевич合作论文数2евгений викторович коротков合作论文数2станислав викторович тихов合作论文数2дмитрий алексеевич павлов合作论文数2сергей васильевич турков合作论文数2D. E. Spirin合作论文数1
Sergey Denisov合作论文数Department of Mathematics, University of Wisconsin-Madison1A. V. Kruglov合作论文数1M. O. Marychev合作论文数1
M. V. Stepikhova合作论文数Russian Academy of Sciences Institute for Physics of Microstructures Nizhni Novgorod1
Dmitry Filatov合作论文数1
