Структурные И Электрофизические Свойства Сильнолегированных Тонких Слоев Кремния На Сапфире, Выращенных Методом Молекулярно-Лучевой Эпитаксии

The Hall effect measurements have been carried out on thin (0.2-2 micron) silicon-on-sapphire layers grown by sublimation molecular beam epitaxy at substrate temperature 600-700°С from Si sources with different P doping level. The temperature dependences have been measured of specific surface conductance and carrier mobility in field effect.