Sensitivity in 400 – 1150 nm spectral range, dark current and dynamic characteristics have been tested of a developed silicon avalanche photodiode with an active diameter of 1.5 mm. Developed Si APD possesses: photosensitivity 80-85 A/W in 900 - 1010 nm spectral range, 1.5 nA dark current, rise and fall time less than 2.5 ns with a bias voltage of 350 v.
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