Technical solution were presented for a foil spectrometer installed on the Globus-M2 and TUMAN-3M tokamaks for measuring the electron plasma temperature. Measurements have been carried out of the time dependence of the plasma temperature in the central region of tokamaks. Using of integrated photodetectors and unique beryllium foils with a thickness of 14-80 μm made it possible to increase the sensitivity of the spectrometer. An important quality of the foils used were the increased values of strength, plasticity, homogeneity, and the absence of surface and internal defects. The combined use of the spectrometer with Thomson scattering diagnostics made it possible to carry out regular temperature measurements in the Globus-M2 tokamak with a high spatial and temporal resolution. The influence of impurities is estimated on the measurement of the electron temperature of the plasma. Keywords: foil spectrometry, tokamak, plasma, continuum, bremsstrahlung, electron temperature, soft-X-Ray, Si-photodiode.

We propose the design of a compact Mattauch–Herzog ion-optical system featuring a double-focusing static mass spectrometer with a cylindrical electrostatic deflector. This system offers second-order angle focusing and first-order energy focusing along the focal line. The collimating system ensures the optimal vertical acceptance of the mass analyzer and maximum ion transmission within the working mass range. The described ion-optical system serves as a foundation for small-sized mass spectrometers, weighing up to 50 kg, including turbo-molecular and foreline pumps, while maintaining high analytical performance.

An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190–303 V, respectively.

electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40–300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the diodes. Over all temperature range, spectra are well approximated by one Lorentz and four Gaussian curves. Lines of dislocation-related luminescence D1–D4 (the D1 line is described by Lorentz curve) and oxygen precipitates (OPs) are present in the spectra. At temperature variation, peak positions of the D1, OP, and D2 lines coincide with temperature dependence of the forbidden gap width reduced by values of 356, 330, and 303 meV respectively. Build and quenching areas are observed on temperature dependences of the electroluminescence intensities of the D1, OP, and D2 lines, the activation energies of the processes are determined, and reasons of their appearance are discussed.

Electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40-300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the diodes. Over all temperature range, spectra are well approximated by one Lorentz and four Gaussian curves. Lines of dislocation-related luminescence D1-D4 (the D1 line is described by Lorentz curve) and oxygen precipitates (OPs) are present in the spectra. At temperature variation, peak positions of the D1, OP and D2 lines coincide with temperature dependence of the forbidden gap width reduced by values of 356, 330 and 303 meV respectively. Build and quenching areas are observed on temperature dependences of the electroluminescence intensities of the D1, OP and D2 lines, the activation energies of the processes are determined, and reasons of their appearance are discussed.

Using a specially designed time-of-flight mass reflectron with a heating element inside the device, which makes it possible to heat solid samples and analyze the gases released from them, protective graphite tiles covering almost the entire plasma-facing surface of the Globus-M2 tokamak vacuum chamber were studied. Mass spectrometric analysis made it possible to determine the composition of the released gases to estimate their quantities, and thus to quantitatively characterize the quality of cleaning and degassing of tiles. It is shown that as a result of the applied method for processing tiles, the content of the light hydrogen isotope— protium, water, carbon monoxide and dioxide decreased several times, and the content of deuterium and helium isotopes decreased almost to zero.

Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3·10-20 cm2·s at room temperature. Keywords:: Light-emitting diodes, dislocation-related luminescence, silicon, oxygen precipitates.

Using a specially designed time-of-flight mass reflectron with a heating element inside the device, which makes it possible to heat solid samples and analyze the gases released from them, protective graphite tiles covering almost the entire plasma-facing surface of the Globus-M2 tokamak vacuum chamber were studied. Mass spectrometric analysis made it possible to determine the composition of the released gases to estimate their quantities, and thus to quantitatively characterize the quality of cleaning and degassing of tiles. It is shown that as a result of the applied method for processing tiles, the content of the light hydrogen isotope - protium, water, carbon monoxide and dioxide decreased several times, and the content of deuterium and helium isotopes decreased almost to zero.

The effect of preliminary straining of copper and iron in liquid nitrogen medium, which facilitates intense penetration of nitrogen into surface layers of the metals, on the position of peaks in the temperature dependence of the water molecule desorption rate is considered based on the concepts of dislocation–dynamic diffusion of atoms and molecules of the medium into the surface layers of solids. It is found that preliminary deformation leads to displacements of the peaks towards higher temperatures. Various methods of separation of peaks on the water desorption curve are compared, and the activation energies of desorption in low- and high-temperature regions are estimated. The reasons for the influence of deformation in liquid nitrogen on the characteristics of water molecule desorption upon heating are considered.

Avalanche silicon photodiode have been developted for near ir, visible, UV and VUV light range. External quantum efficiency have been studied in 114 - 170 abd 210 - 1100nm range. It is demonstrated that photodiode reach from 29 to 9300 electrons/photon on 160 nm with bias voltage of 190 and 303 v respectively.

Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+- ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than 150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3 · 10-20 cm2 · s at room temperature.

На основе представлений о дислокационно-динамической диффузии атомов и молекул среды в приповерхностные слои твердых тел при их деформации рассмотрено влияние предварительной деформации меди и железа в среде жидкого азота, способствующей интенсивному проникновению азота в приповерхностные слои металлов, на положение максимумов зависимости скорости десорбции молекул воды от температуры. Обнаружено смещение максимумов в сторону более высоких температур в результате предварительной деформации. Произведено сравнение различных способов разделения пиков на кривых десорбции воды и оценены энергии активации процессов десорбции в низко- и высокотемпературных областях, а также высказаны предположения о причинах влияния деформации в жидком азоте на характеристики десорбции молекул воды при нагревании. Ключевые слова: десорбция молекул воды, деформация в среде азота, дислокационно-динамическая диффузия.

An improved architecture of a hybrid matrix detector that operates in the vacuum ultraviolet-hard X-ray range in the 32 × 32 format for high-speed registration of the radiation profile of high-temperature plasma with photon energies of (Eph = 1–10 000 eV) is described. The detector includes silicon photodiodes, preamplifiers, and a system for digitizing and transmitting information with a frame time of 2 μs and continuous recording of up to 4 s. This work took the experience of using the previous model of a 16 × 16 hybrid matrix detector in the T-11M and Globus-M tokamaks into account. The results of absolute calibrations of the photodiode sensitivity in the 1–60 000 eV energy range are presented. A functioning prototype of a 1 × 32 submodule is demonstrated.

Technical solution were presented for a foil spectrometer installed on the Globus-M2 and TUMAN-3M tokamaks for measuring the electron plasma temperature. Measurements have been carried out of the time dependence of the plasma temperature in the central region of tokamaks. Using of integrated photodetectors and unique beryllium foils with a thickness of 14–80 µm made it possible to increase the sensitivity of the spectrometer. An important quality of the foils used were the increased values of strength, plasticity, homogeneity, and the absence of surface and internal defects. The combined use of the spectrometer with Thomson scattering diagnostics made it possible to carry out regular temperature measurements in the Globus-M2 tokamak with a high spatial and temporal resolution. The influence of impurities is estimated on the measurement of the electron temperature of the plasma.

The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.

A detector for detection of beta-decay electrons in experiments on recording of a signal of sterile neutrinos is searched for. A set of parameters indicates that an avalanche silicon precision detector is a promising detector that allows electron counting rates of up to 2.5 × 10 7 s –1 for an active area of 0.785 mm 2 at room temperature with a possibility of spectrometric detection.

We have considered the effect of a helium medium during grinding of cement powder and rolling of polycrystalline aluminum on the number of water molecules and the kinetics of desorption of water from the surface of these materials during heating at a constant rate. We have separated the peaks on the water desorption curves and demonstrated the effect of the helium medium during fracture (grinding) and deformation (rolling) on the characteristics of desorption. The activation energies of water desorption in various temperature regions and their variation during fracture and deformation of materials in helium and in air have been estimated. It is proposed that helium atoms occupy sites vacant for adsorption of water molecules in the newly formed regions of bodies subjected to a mechanical action and that adsorbed atoms and molecules of the medium penetrate into the surface layer of the material in accordance with the mechanism of dislocation-dynamics diffusion (DDD).

Magnetic resonance mass spectrometers (MRMSs), developed in the second half of the 20th century at the Ioffe Institute, have still possessed such a complex of parameters that they have no alternative for solving many analytical problems, in particular, in the isotopy of helium. With the resolution of one of the devices several thousand at the base of the 3He+ mass peak, its absolute sensitivity is <106 atoms of this isotope in the volume of the mass analyzer chamber (~2.5 L), and the 3He/4He isotope ratio measured in a single experiment can be as low as 109 and even 1010. Another device of this type demonstrated resolution of more than 150 000 at the base of the mass peak, which ensured the detection of a 3He+–3T+ doublet. Excellent analytical characteristics of the MRMSs make it possible to use them to study the isotopy of helium in natural and man-made samples (solid, liquid, or gaseous) in meteorites and lunar soil, ferromanganese nodules from the bottom of seas and oceans, in ice cores from the well of Lake Vostok in Antarctica, in water from mountain streams of Mongolia and geysers of Iceland, in volcanic gases of Kamchatka and gases released from structural materials of a modern thermonuclear installation. In this work, we consider the principle and modes of operation of an MRMS and its design. The focus is on the details that distinguish these instruments from other instruments and ensure extremely high analytical performance, which is partly presented in the article.

Silicon light-emitting diodes with luminescence associated with (113) defects have been fabricated using implantation of 350 keV oxygen ions at the dose of 3.7∙1014 cm-2 and subsequent annealing at 700ᵒC for 1 h in a chlorine-containing atmosphere. Electroluminescence was studied in wide ranges of temperature and an excitation power. The line associated with (113) defects dominates in all the spectra. The temperature dependence of the line intensity depends on the excitation power in the range of low temperatures: an increase of the intensity with activation energy of 25 meV is observed at low current density and, with the increasing current density, a rise of the intensity is not observed. At higher temperatures, a decrease of the intensity with activation energy of 59 meV occurs regardless of a current density. With the increasing temperature, the peak of the line shifts by the same energy as the forbidden gap width, while the half width of the line grows linearly.