Boosting the Photoelectrochemical Performance of ZnIn 2 S 4 Photoanodes Via Antimony-Induced Defect and Surface Homojunction Engineering

Sb-induced O-related defect engineering promotes lattice/near-lattice oxygen incorporation and a surface/bulk homojunction in ZnIn 2 S 4 , thereby enhancing charge separation and improving PEC activity under anodic operation.