As the semiconductor industry continues to push the limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. New techniques and methods are needed to mitigate pattern defectivity and roughness using both lithography and etch processes to eliminate film-related defects. These approaches require further improvements to the process chemicals and the lithography process equipment to achieve finer patterns. Additionally, underlayers and resist optimization play a significant role in resist pattern fidelity. This paper reviews the ongoing progress in coater/developer processes that are required to enable EUV patterning by using chemically amplified and metal oxide resists. We will discuss several new techniques for pattern defectivity, roughness, and EUV dose- to- size reduction using coater/developer processes. In addition, we will review our study with various underlayers to enable smaller minimum critical dimension size.
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