Critical Overcurrent Turn-off Close to IGBT Current Saturation

A. Philippou,C. Jaeger,J. G. Laven,R. Baburske,H. -J. Schulze,F. Pfirsch,F. -J. Niedernostheide,A. Vellei,H. Itani

International Symposium on Power Semiconductor Devices and IC's (ISPSD)（2015）

Infineon Technol AG

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摘要

A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.

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关键词

IGBT Modules