New 1200 V IGBT and diode technology optimized for drives application are presented. The proposed IGBT structure is based on micro-pattern trenches with sub-micron mesas which provide strongly reduced static losses compared to standard technologies and offer a high level of controllability. For the diode, improved performance with significantly reduced oscillatory behavior is achieved due to an optimized field-stop design. In power modules, higher current density and larger output current are reached due to the superior performance of IGBT and diode. Additionally, by raising the allowed maximum operation temperature up to 175 deg C in the power module, an increase of the output current of more than 50 % can be obtained.

A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.

A semiconductor device (500) comprises transistor cells (TC), which are formed along a first surface (101) on a front side of a semiconductor body (100) in a transistor cell region (610). A drift zone structure (120) first pn junctions (PN1) with body zones (115) of the transistor cells (TC). An auxiliary structure (132) between the drift zone structure (120) and a second surface (102) on a rear side of the semiconductor body (100) comprises a first portion (132a) containing Tiefpegeldotierstoffe which require at least 150 meV to ionize. A collector structure (138) is directly adjacent to the auxiliary structure (132). An injection efficiency of minority carriers from the collector structure (138) in the drift zone structure (120) along changing a direction parallel to the first surface (101) at least in the transistor cell region (610).