EEPROM programming window changes with operating temperature

This paper is devoted to the understanding of Electrically Erasable Programmable Read Only Memory (EEPROM) programming window (PW) changes with operating temperature. First a theoretical analysis is carried out, and two main contributions to the PW change are identified: change of the sense transistor characteristics and variation of the FN (Fowler–Nordheim) injection mechanism. An experimental study is then conducted on samples with various size (0.8 and 19360μm2) and coupling coefficients (0.45, 0.62 and 0.71), for temperatures in the range 25–200°C. Whereas the results concerning the erased mode are reproducible and quantitatively explained by the model, data relative to the written state of real size cells features an irreproducible behavior which was not elucidated.