High-Temperature Inter -Cavity Silicon Interposer Substrate for Multi-Chip Module Assembly

Many of the Integrated Circuit (IC) solutions generated by GCI involve multi-chip module (MCM) types of layouts within the package cavity to emulate the original onolithic device (single die in package cavity), ultimately providing a form, fit, andfunctional drop -in replacement. These M(.71.1 architectures provide the greatest degree offlexibility when ensuring that the obsolete component's electrical requirements are met'. This paper will address the design, development, and manufacture of inter-cavity silicon interposer substrates, by GCI and the University of Colorado at Colorado Springs Electrical and Computer Engineering department (UCCS-ECE), that provide signal routing of the passive and active devices within the cavity to meet the functional requirements of older obsolete devices. In this manner, a wide array of newer generation components can be configured within the package cavity on these silicon interposer substrates to architect obsolescence solutions while also meeting the high -temperature requirements of the Au-Sn (gold/tin) lid solder seal processes (-340 C). Silicon substrates can also replace ceramic interposer versions, while meeting or exceeding pegiirmance requirements, decreasing lead times, and manufactured with more competitive costs.